PbZrXTi1-xO3 (PZT) thin films have been deposited on a variety of electrode and substrate materials using pulsed-laser ablation-deposition (PLAD). Growth of PZT films on epitaxial (100)Pt/MgO, fiber-textured (111)Pt/Ti/SiO2/Si, epitaxial (110)RuO2/MgO2 or polycrystalline RuO2/SiO2/Si resulted in mixtures of perovskite and pyrochlore phases. Under identical growth conditions, films deposited on epitaxial (001)YBa2Cu3O7−δ/MgO and (100)La0.5CoO3/MgO, or polycrystalline La0.5Sr0.5CoO3/MgO/Si, contain only the ferroelectric, perovskite phase. The YBa2Cu3O7–δ (YBCO) and La0.5Sr0.5CoO3 (LSC) surfaces stabilize the nucleation of the ferroelectric phase under the PLAD growth conditions. Capacitors with sputter-deposited Pt top electrodes all show significant polarization fatigue by 108 switching cycles, although the (001) PZT films on (100)LSC/MgO and (001)YBCO/MgO show the least degradation. By using PLAD to deposit both top and bottom (100) LSC electrodes, we have obtained LSC/PZT/LSC capacitors on (100) MgO with no observable fatigue after 3×1010 switching cycles. These results indicate that the LSC/PZT/LSC capacitor structure has promise for use in ferroelectric nonvolatile memory devices.
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Lichtenwalner et al. (1994) studied this question.
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