Characterization of a Sol-Gel Derived Pb(Zr, Ti)O₃ Thin-Film Capacitor with Polycrystalline SrRuO₃ Electrodes

The characteristics of a sol-gel derived Pb(Zr, TiO) 3 thin-film capacitor with polycrystalline SrRuO 3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr, Ti)O 3 film with columnar grain structure was formed on SrRuO 3 substrates since nucleation of Pb(Zr, Ti)O 3 took place at the interface with SrRuO 3 . A Pb(Zr, Ti)O 3 capacitor with top and bottom SrRuO 3 electrodes showed excellent electrical properties. Leakage current densities were around 1×10 -7 A/cm 2 at ±5.0 V. The capacitor exhibited good reversibility at an applied voltage of 3.0 V. Remanent polarization density for 3.0 V was 14.3 µc/cm 2 . Degradation of remanent polarization density was not observed up to switching cycles of 1×10 10 . Polycrystalline SrRuO 3 thin film is expected to be a good candidate for the electrode material of Pb(Zr, Ti)O 3 capacitors.