Recessed-Gate AlGaN/GaN HFETs With Lattice-Matched InAlGaN Quaternary Alloy Capping Layers

In this paper, we present recessed AlGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In/sub 0.09/Al/sub 0.32/Ga/sub 0.59/N capping layer has close total polarization and bandgap to those of the underlying Al/sub 0.26/Ga/sub 0.74/N layer. The balanced polarization eliminates the depletion of electrons at the In/sub 0.09/Al/sub 0.32/Ga/sub 0.59/N/Al/sub 0.26/Ga/sub 0.74/N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact resistance of 1.0/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/ or less. Detailed analysis of the source resistance reveals that the series resistance at the In/sub 0.09/Al/sub 0.32/Ga/sub 0.59/N/Al/sub 0.26/Ga/sub 0.74/N interface is one fifth as low as the resistance at the conventional GaN/Al/sub 0.26/Ga/sub 0.74/N interface.