Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray pulses allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with the exception that persistent photoconductivity was observed in some devices.
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Anderson et al. (1987) studied this question.
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