A radiation hardening method for GaAs FETs has been developed using an AlGaAs buffer layer. The long term transient response resulting from irradiation with 40 MeV electrons and flash x-rays was reduced by an order of magnitude compared to FETs fabricated without the buffer layer. A model is discussed to explain the reduced transient effect in which the buffer layer plays the role of isolating the active layer from radiation induced stored charge in the substrate.
No takes yet. Share an insight, caveat, or question.
Anderson et al. (1986) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: