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The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of>
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Lee et al. (1988) studied this question.
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