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This letter presents electrical characteristics of thin (110 Å) metal-oxide-semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized-nitrided CVD dielectrics exhibit lower rates of interface-state generation and electron trapping under electrical stress, as compared to as-deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized-nitrided CVD films may be promising candidates for thin dielectrics applications.
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Hwang et al. (1989) studied this question.
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