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November 1, 1969Journal of Applied Physics

Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS Devices

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CGC. W. GwynIntel (United States)

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C. W. Gwyn (1969) studied this question.

synapsesocial.com/papers/6a87c57ef8efd6d7e4fb11a5https://doi.org/10.1063/1.1657309
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