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A complementary two-step MOCVD growth technique for the self-aligned laser is described which eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the regrowth interface outside the stripe region. Single-longitudinal-mode operation with stable near and far-field patterns has been obtained to more than twice the laser threshold current.
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Mawst et al. (1985) studied this question.
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