AlAs0.16Sb0.84 ternaries and AlAs0.16Sb0.84/InAs superlattices have been grown by molecular beam epitaxy lattice-matched on InAs substrates. The compositional dependence of AlAs y Sb1- y on the ratio of Sb4 to As2 fluxes as well as on the substrate temperature has been investigated and can be explained qualitatively. The growth of AlAs0.16Sb0.84/InAs superlattices is described and illustrated by the results of reflection high-energy electron diffraction measurements. The crystalline quality of the superlattices is demonstrated by means of transmission electron microscopy and X-ray diffraction measurements.
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Németh et al. (1997) studied this question.
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