We describe the metal-organic chemical vapor deposition (MOCVD) growth of AlAs/sub 1-x/Sb/sub x/ cladding layers and InAsSb-InAs multiple-quantum well (MQW) and InAsSb-InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. The AlAs/sub 1-x/Sb/sub x/ cladding layers were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. By changing the layer thickness and composition of SLSs and MQWs, we have prepared structures with low temperature (<20 K) photoluminescence wavelengths ranging from 3.2 to 6.0 /spl mu/m. We have made gain-guided injection lasers using undoped p-type AlAs/sub 0.16/Sb/sub 0.84/ for optical confinement and both strained InAsSb-InAs MQW and InAsSb-InAsP SLS active regions. The lasers and light emitting diodes (LEDs) utilize the semi-metal properties of a GaAsSb(p)-InAs(n) heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb-InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8-3.9 /spl mu/m and a characteristic temperature of 29-40 K. We also present results for both optically pumped and injection lasers with InAsSb-InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7-/spl mu/m strained-layer superlattice (SLS) laser was 240 K. An SLS LED emitted at 4.0 /spl mu/m with 80 /spl mu/W of power at 300 K.
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Biefeld et al. (1997) studied this question.
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