Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD

We report the first growth of selectively doped n-GaInP/GaAs heterostructures by low pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium, triethylgallium, phosphine and arsine as source materials. The Shubnikov-de Haas oscillation and the temperature dependence of electron mobility indicate that a two-dimensional electron gas is present at the GaInP/GaAs interface. It is noted that the persistent photoconductivity observed in these heterostructures was very weak. These results suggest potential application of this material system to high electron mobility transistors (HEMT).