Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition

The uninterrupted growth of high quality GaInAs layers on InP buffers by atmospheric pressure metalorganic chemical vapor deposition using trimethylindium is reported. A lattice mismatch smaller than 4.3×10−4 and low-temperature photoluminescence exciton linewidth of 2.6 meV have been obtained, along with best 300-K, 77-K, and 4.2-K Hall mobilities of 11 200, 64 000, and 80 000 cm2/Vs, respectively. Such high mobility values at 4.2 K are explained by the existence of a two-dimensional electron gas and demonstrate the superior quality of the GaInAs epilayers grown in our laboratory.