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The far-infrared photoresponse (20-80 cm-1) of a GaAs/AlGaAs detector operating at cyclotron resonance under quantum Hall effect conditions has been investigated. The response has been shown to arise near the magnetic fields corresponding to even values of the Landau level filling factor. A possibility of detector band tuning by a simultaneous increase of the magnetic field and the two-dimensional electron concentration (the latter due to the persistent photoconductivity after bandgap illumination) is demonstrated. The time constant of the response has been shown to increase dramatically with the rise of the magnetic field. This paper was presented at the 8th International Symposium on Nanostructures: Physics and Technology (St Petersburg, 2000).
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Andreev et al. (2001) studied this question.
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