Low Damage,>tex<hbox Cl₂>/tex<-Based Gate Recess Etching for 0.3->tex<$muhbox m$>/tex

The traditional dry etching for GaN using the Ar/Cl2mixture gas in the reactive ion etching system has been developed. In order to reduce the surface damage, the additional CH4gas is introduced. However, this approach still has the problems of the residual surface damage and low etching selectivity between the AlGaN and GaN materials. Therefore, the following rapid thermal annealing (RTA) at 700/spl deg/C is necessary to recover the surface properties. We proposed the Ar/Cl2/CH4/O2for the GaN gate-recess etching in AlGaN/GaN HEMTs fabrication, which achieves a low surface damage and a high etching selectivity simultaneously. The 0.3 μm gate-length AlGaN/GaN HEMTs present a transconductance of 230 mS/mm, an fTof 48 GHz, and fmaxof 60 GHz, respectively.