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August 21, 2003Applied Physics Letters

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

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Authors

JMJ. MitterederLouisiana State UniversitySBS.C. BinariUnited States Naval Research LaboratoryPKP. B. KleinUnited States Naval Research Laboratory

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Mittereder et al. (2003) studied this question.

synapsesocial.com/papers/6a891647d7d36899887604c2https://doi.org/10.1063/1.1604472
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