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January 1, 1993Journal of Applied Physics

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy

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TMT. D. MoustakasBoston UniversityJSJoseph C. ScanlonLinde (United States)

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Moustakas et al. (1993) studied this question.

synapsesocial.com/papers/6a8917628513b156087b48eahttps://doi.org/10.1063/1.353870
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  1. 1Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon1991 · 376 citations
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  5. 5Reactive sputtering of gallium nitride thin films for GaAs MIS structures1978 · 46 citations