An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented. Through a comparison between these two nonstatic models and a conventional model, nonstationary carrier transport is shown to dominate in 0.4 mu m or less channel devices, with peak velocities exceeding 1.0*10/sup 7/ cm/s. It is shown that the relaxation time approximation model tends to overestimate nonstationary carrier dynamics, especially the energy distribution.>
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Tomizawa et al. (1988) studied this question.
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