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April 27, 1995Electronics Letters

Body contacts in InP-based InAlAs/InGaAs HEMTs andtheir effects on breakdown voltage and kink suppression

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TSTetsuya SuemitsuTohoku UniversityTET. EnokiNTT (Japan)YIY. IshiiVrije Universiteit Brussel

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Suemitsu et al. (1995) studied this question.

synapsesocial.com/papers/6a891789544bae4dd6a29ff7https://doi.org/10.1049/el:19950496
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  5. 50.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects1994 · 117 citations