Temperature-dependent kink effect model for partially-depleted SOI NMOS devices

This paper reports a closed-form analytical temperature-dependent kink effect model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an analytical triggering V/sub DS/ formula for temperature-dependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter thin-film doping density, the onset of the kink effect occurs at a larger V/sub DS/.