The nonequilibrium effects of hot carriers are investigated to analyze avalanche generation for submicrometer MOSFET devices. A simple analytical expression for the impact ionization utilizing the mean free path concept is developed. It is incorporated into a conventional drift-diffusion equation solver (PISCES) to obtain the substrate current in submicrometer MOSFET devices. The transconductance for high drain bias and breakdown conditions are analyzed based on the proposed impact ionization model.>
No takes yet. Share an insight, caveat, or question.
Hwang et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: