Impact of twin-gate concept on silicon-on-insulatorinverters

In the Letter the low-temperature DC transfer characteristics of inverters, fabricated in a 1 µm silicon-on-insulator (SOI) CMOS technology, are investigated. As will be shown, the operation parameters, such as the noise margin, are degraded by the floating body effects, typical for a partially depleted technology and by low-temperature artefacts. However, by using the so-called twin-gate concept, considerable improvement in the inverter performance can be obtained, both at room temperature and at 4.2 K.