Answers are grounded in this paper and cite their sources.
To grow a highly reflective semiconductor multilayer mirror and to grow a reproducible composition of GaInAsP/InP for surface‐emitting lasers, a high growth rate (a few μm/h) with a good thickness controllability is required. The authors have investigated the controllability of GaInAs/InP growth of chemical beam epitaxy (CBE). The maximum growth rate of 2.6 μm (InP) and 6.0 μm/h (GaInAs) was obtained without sacrificing surface morphology. With the growth rate being kept reasonably high, a good controllability of layer thickness was obtained and confirmed by growing a 6‐Å quantum well. The thickness error for InP and GaInAs was 1.5 and 2.0 percent, respectively.
No takes yet. Share an insight, caveat, or question.
Uchida et al. (1992) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: