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The authors report optical investigations of an InGaAs-InGaAsP-InP double-step quantum well designed to provide a sensitive measurement of the band offsets in this technologically important system. The results yield a conduction band offset to bound-gap difference ratio of 43+or-2% which coincides with recent estimates for the InGaAs-InP heterojunction.
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Soucail et al. (1990) studied this question.
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