GaInAs/GaAs strained-layer superlattices grown by low pressure metalorganic vapor phase epitaxy

Strained-layer superlattices (SLS’s) of GaxIn1−xAs/GaAs (x≂0.8–0.9) have been grown by low pressure metalorganic vapor phase epitaxy. The reactants were trimethylgallium, trimethylindium, and arsine. The structures were characterized by Auger profiling and low-temperature photoluminescence. These measurements show that high quality SLS’s with interface widths no larger than 25 Å and very narrow luminescence peaks (6.5 meV) similar to the best structures grown by molecular beam epitaxy, can be easily grown by low pressure metalorganic vapor phase epitaxy.