Ion-bombardment-induced transfer of H from N to Si in amorphous Si3N4

A transfer of hydrogen from nitrogen to silicon bonds in CVD silicon nitride under N+ and He+ ion bombardment is reported. The amount of H transferred is a function of the ion energy deposited in atomic processes, and the thermal stability of the transferred H is comparable to that for H retained in Si-H bonds during deposition. H transfer is proposed to explain previously reported electrical effects of bombardment-anneal processing of Si3N4 films, and an analogy to H passivation of Si dangling bonds in a-Si is suggested.