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A particular coplanar thin film structure is analysed theoretically in order to determine the post-breakdown region parameters of a switching semiconductor device. Two types of conductivity versus temperature curves are used; firstly an exponential and secondly a transition-type one related to the VO2 case. Uniform and filamentary current-voltage characteristics and temperature profiles are deduced from homogeneous and inhomogeneous computed solutions of the thermal equilibrium equation. Both are compared to experimental results obtained on Ovonic and VO2 devices.
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Duchêne et al. (1971) studied this question.
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