Be-implanted GaAs are annealed by rapid thermal annealing (RTA) using halogen lamps. Electrical properties of the annealed GaAs are investigated, emphasizing those at 77K for application to the p+-layer of Be-implanted WSix-gate self-aligned two-dimensional hole gas (2- DHG) FET. An electrical activation of 90 percent (for 2.0 × 1013cm-2) or 80 percent (for 2.2 × 1014cm-2) is obtained. An annealing temperature dependence of carrier freezing at 77K is observed for higher dose samples. The phenomenon is attributed to the redistribution of impurity atoms near the high-concentration peak.
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Maezawa et al. (1986) studied this question.
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