A framework for the kinetics of film growth under simultaneous doping conditions

A general framework for the kinetics of film growth is given for the codeposition of both host (semiconductor) and dopant species on the basis of the electronic effects of adsorbed species on the adsorption of the host and dopant species onto the doped crystal surface. Independent experiments can be carried out for the determination of the growth kinetics in an a priori manner. Simple analysis procedures are involved. The general framework is applied to the polycrystalline silicon growth in the presence of As, P, and B that was reported in the literature.