Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures

We fabricated InGaN quantum wells on GaN microlens structures by employing a thermal reflow method. The peak emission wavelengths shift from ∼490 nm on the top of the microstructure to ∼400 nm on the bottom. This variation is attributed to the In composition distribution caused by the continuously changing off-angles from the (0001) plane. The obtained results suggest that not only stable planes exposed in microstructures by selective area growth technique but also unstable planes can be useful for InGaN-based microstructures with multiwavelength emission properties.