Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires

This is the authors' abstract. We don't add key points for this paper.

Nanowires of group-I00exI00exI nitride semiconductors might be the avenue to cost-effective, phosphorless white LEDs for displays and solid-state lighting. The authors investigate the optoelectronic properties of N-polar (In,Ga)N/GaN nanowire LEDs, and compare the main features of LEDs based on nanowires versus conventional planar layers. Their detailed insight on the consequences of strain relaxation in nanowires for LED emission, and the role of crystal polarity in the recombination mechanisms of planar and nanowire systems, will facilitate the design of tomorrow's devices.