Molecular-beam epitaxy grown Fabry–Perot multiple quantum well reflection modulator

Electrically-tunable Fabry–Perot structures have been shown to work well as intensity modulators. We describe the growth of these structures by molecular-beam epitaxy. A sensitivity analysis was performed. For some applications, deviations of >0.1%–0.2% in layer thicknesses from the desired thicknesses can degrade the modulation performance. Such tolerances offer continued challenges to crystal growers regarding control of layer thickness, composition, and uniformity.