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April 1, 2001Japanese Journal of Applied PhysicsOpen Access

In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy

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Authors

HYHarumasa YoshidaTUTatsuhiro UrushidoHMHideto Miyake

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Yoshida et al. (2001) studied this question.

synapsesocial.com/papers/6a893f3aabe412682d92d305https://doi.org/10.1143/jjap.40.l313
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