Band-to-band tunnelling current in Ga 0.47 In 0.53 As p-n junctions

The tunnelling current in Ga0.47In0.53As p-n junctions from Zener tunnelling is calculated from the Kane model with no adjustable parameters. This calculation indicates that band-to-band tunnelling becomes an important contribution to the reverse current near breakdown (JR = 10−1 Acm−2) in abrupt p-n junctions for |ND−NA|>6 × 1015 cm−3. Experimental measurements show, however, that band-to-band tunnelling becomes the dominant contribution to the dark current near breakdown for |ND−NA|>4 × 1016 cm−3.