Lifetime of Charge Carriers in Intrinsic Indium Antimonide

This is the authors' abstract. We don't add key points for this paper.

The lifetime of additional photoinjected electron—hole pairs in intrinsic InSb at 291 K is investigated by measuring the photoconductive (PC) decay. Apart from studying the usual PC‐decay an arrangement is used with superimposed magnetic field transverse to the electric field. Depending on the direction of the magnetic field the photoinjected plasma is either driven into the sample's bulk or travels parallel to the illuminated surface. The Auger‐lifetime is evaluated from the measurements by a numerical magnetohydrodynamical simulation taking into account surface recombination as well as the Suhl profile of the intrinsic plasma. A lifetime of τ = (57 ± 3) ns is found which is independent of the magnetic field up to 2.3 T.