Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure. Films were deposited at substrate temperature of 300 °C in mixed gases (12 mTorr of argon and 1–50 mTorr of oxygen) using a KrF excimer laser (248 nm and 30 ns full width at half maximum) at a fluence of 1.2 J/cm2. ITO films (300 nm thick), deposited by PLD on YSZ at 300 °C in a gas mixture of 12 mTorr of argon and 6 mTorr of oxygen, exhibit a low electrical resistivity (1.6×10−4 Ω cm) with a high transparency (∼74%) at 550 nm. ITO films deposited on both glass and YSZ substrates have been used as an anode contact in organic light-emitting diodes. A comparison of the device performance for the two substrates shows that the device fabricated on the ITO/YSZ has a higher external quantum efficiency than that of the device fabricated on the ITO glass.
No takes yet. Share an insight, caveat, or question.
Kim et al. (2002) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: