The temperature dependence of the growth and evaporation rates in GaAs, In x Ga1-x As and In x Al1-x As grown by molecular-beam epitaxy (MBE) was measured by reflection high-energy electron-diffraction (RHEED) oscillations. The growth rate and the evaporation rate of GaAs were fitted using a thermodynamical approach. For ternary alloys the calculated results were in agreement with the observed growth rates.
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Chika et al. (1986) studied this question.
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