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October 17, 1988Applied Physics Letters

Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

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Authors

PLP. LegagneuxCentre d'Etudes Biologiques de ChizéGGG. GarryCentre National de la Recherche ScientifiqueDDD. DieumegardThales (France)

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Legagneux et al. (1988) studied this question.

synapsesocial.com/papers/6a8951c47fec28afabc112eahttps://doi.org/10.1063/1.100431
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Si on Cubic Zirconia1983 · 31 citations
  2. 2Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition1986 · 46 citations
  3. 3Interface oxidation of epitaxial silicon deposits on (100) yttria stabilized cubic zirconia1985 · 19 citations