Direct Liquid Injection Metallorganic Chemical Vapor Deposition of ZrO[sub 2] Thin Films Using Zr(dmae)[sub 4] as a Novel Precursor

A novel liquid Zr precursor with a donor-functionalized alkoxy ligand has been characterized by thermogravimetry (TG) and differential scanning calorimetry (DSC) analysis, nuclear magnetic resonance, and mass spectrometry. vaporizes near 320°C and reacts with oxygen at around 310°C under our TG/DSC measurement conditions. The bond strength of Zr-dmae was found to be similar to that of The thin films deposited at 300-480°C by a direct liquid injection metallorganic chemical vapor deposition process had a dense and smooth morphology. The film had a weak monoclinic phase in an amorphous background without any other metastable phase such as tetragonal or cubic. The high-frequency (1 MHz) capacitance-voltage curves showed that the flatband voltage of the thin films deposited at 400°C was close to the theoretical value of −0.9 V. The interface trap density near the midgap was found to be less than which was calculated by the Terman method.