Studies on Ferroelectric Properties of Sol-Gel Derived Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] Using Ba[sub 0.5]Sr[sub 0.5]RuO[sub 3] as the Conductive Electrodes

(PZT) thin films with a (110) preferred orientation were prepared on substrates using a sol-gel method. The oxide bottom electrode, BSR, was fabricated at various temperatures on substrates by rf sputtering. The annealed PZT films on substrates exhibited improved crystallinity. The electrical properties of PZT films, such as the electric field induced variations of the leakage current density, the dielectric constant, and the polarization were strongly dependent on the processing temperatures of the PZT films as well as the bottom oxide electrode. A typical PZT thin film annealed at 650°C on the BSR electrode, which was deposited at 450°C on the substrate by a sputtering technique, has a leakage current of at an applied electric field of 500 kV/cm and a dielectric constant of 968. From the polarization-electric field characteristics, the remanent polarization and coercive field of the PZT were found to be and respectively, at an applied voltage of 5 V. The PZT films exhibited fatigue-free characteristics up to switching cycles under 5 V bipolar pulses.