InGaAs/InP pin photodiode arrays on AlGaAs/GaAswaveguide films by solid source molecular beam epitaxy

The first solid-source molecular beam epitaxial growth of infrared-sensitive In0.53Ga0.47As on top of an AlGaAs/GaAs waveguide for monolithic 1.55 µm receiver applications has been demonstrated using a single, thin InP buffer layer to suppress dislocations. Mesa-type detector arrays were made by chemically assisted ion beam etching. Using a novel dense array fabrication technique, the integration of InGaAs optoelectronic devices with AlGaAs/GaAs waveguide films grown on a GaAs substrate has been demonstrated.