Answers are grounded in this paper and cite their sources.
A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as −31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.
No takes yet. Share an insight, caveat, or question.
Suzuki et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: