We propose Ir thin films as new electrode materials for high dielectric BST capacitors. Ir was found to be superior to Pt in a number of aspects such as resistivity, adhesion and surface roughness. The Pt/BST/Ir/SiO2/Si capacitors showed leakage currents as low as Pt/BST/Pt/SiO2/Si ones, but higher capacitance resulted. For endurance properties with +5V unipolar pulse trains, the dielectric constant of BST films on Ir decreased by only 10% below its initial value after switching of 109 cycles while that on Pt degraded by 30% after 108 cycles. Ir bottom electrode effects on BST film properties were well explained by the formation of IrO2 phases on the surface of Ir electrodes.
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Young et al. (1997) studied this question.
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