High Dielectric Constant Films of Amorphous LiNbO3 Prepared by Sputtering Deposition

Thin films of amorphous LiNbO3 were obtained by a sputtering deposition. The films were crystallized by annealing at 500°C. Measurements of dielectric constant and loss tangent were made for the as-grown film at 1 k to 1 MHz. A temperature dependence of the dielectric constant in a course of heating showed a peak at about 350°C. The peak value at 1 kHz reached 104.