Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 4, 1988Applied Physics Letters

Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells

View Full Paper
Ask AI
Bookmark
Share

Authors

IBI. Bar‐JosephWeizmann Institute of ScienceGSG. SuchaMichigan UnitedDMDavid A. B. MillerUniversity of North Carolina at Charlotte

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Bar‐Joseph et al. (1988) studied this question.

synapsesocial.com/papers/6a896a5ec2b067567ebd4ceehttps://doi.org/10.1063/1.99315
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator1987 · 96 citations
  2. 2The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation1985 · 549 citations
  3. 3High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure1984 · 386 citations
  4. 4High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator1987 · 31 citations
  5. 5Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy1987 · 151 citations