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January 1, 1969Proceedings of the IEEE

On the static collector-emitter saturation voltage of a transistor with a lightly doped collector

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Abstract

A one-dimensional analysis which defines the static collector-emitter saturation voltage characteristic of epitaxial and triple-diffused transistors in terms of collector current, base current, and device parameters is given.

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Cite This Study

W.J. Chudobiak (1969) studied this question.

synapsesocial.com/papers/6a896afa8371e1a748c9892a https://doi.org/10.1109/proc.1969.7048

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