A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (Ic> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.
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Chen et al. (1987) studied this question.
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