Preparation and Characterization of Epitaxial Lead Zirconate Titanate Films on Pt/(Ti, Al)N/TiN/Si Substrates by Metalorganic Chemical Vapor Deposition

[001]-Oriented lead zirconate titanate (PZT) thin films were epitaxially grown on Pt/titanium-aluminum-nitride (TAN)/titanium-nitride (TiN)/Si substrates by metalorganic chemical vapor deposition (MOCVD). Epitaxial thin films of TAN were formed as buffer layers on the Si substrates by pulsed-laser deposition (PLD) using TiN seed layers. Oxidation of the TAN was prevented by a sufficiently thick epitaxial Pt layer between the PZT and the TAN, thereby improving the crystallinity and electrical properties of the PZT films. The epitaxial PZT films had a dielectric constant of 697 and a remanent polarization of 38 µC/cm2.