Low-Concentration Cadmium Diffusion into GaAs

This is the authors' abstract. We don't add key points for this paper.

Experimental results to obtain low p-type surface concentration into GaAs at high temperature using Ga-Cd alloy as a diffusion source, for the fabrication of a bipolar transistor optical switch, have been presented for the first time. The values of the diffusion coefficient of different proportions of cadmium into the alloy source are measured. The diffusion constant, D 0, and the activation energy, ε, for pure cadmium and 1% cadmium into the Ga-Cd alloy as a source have also been measured. The modified values of these parameters for pure cadmium seem to be different as compared to the data reported earlier due to the SiO2 thin film deposited on the surface of the substrate to prevent arsenic loss at high temperature. The experimental results show a continuous reduction in surface concentration and diffusion coefficient by reducing the percentage quantity of cadmium into the Ga-Cd alloy diffusion source.