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January 1, 1987IEEE Electron Device Letters

Effects of H+implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics

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Authors

MRM. RödderSamsung (United States)DAD.A. AntoniadisMassachusetts Institute of TechnologyFSF. ScholzUniversität Ulm

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Rödder et al. (1987) studied this question.

synapsesocial.com/papers/6a897a02e2cdaa79096223cbhttps://doi.org/10.1109/edl.1987.26539
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